3SK317 silicon n-channel dual gate mos fet uhf / vhf rf amplifier ade-208-778 (z) 1st. edition mar. 1999 features low noise characteristics; (nf = 1.0 db typ. at f = 200 mhz) high power gain characteristics ; (pg = 27.6 db typ. at f = 200 mhz) outline cmpak-4 1. source 2. gate1 3. gate2 4. drain 1 4 3 2 note: marking is ?r-?
3SK317 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v ds 14 v gate1 to source voltage v g1s 8v gate2 to source voltage v g2s 8v drain current i d 25 ma channel power dissipation pch 100 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 14v i d = 200 m a v g1s = v g2s = -3 v gate1 to source breakdown voltage v (br)g1ss 8v i g1 = 10 m a v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss 8v i g2 = 10 m a v g1s = v ds = 0 gate1 to source cutoff current i g1ss 100 na v g1s = 6 v v g2s = v ds = 0 gate2 to source cutoff current i g2ss 100 na v g2s = 6 v v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0 0.2 1 v v ds = 10 v, v g2s = 3 v i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0 0.3 1 v v ds = 10 v, v g1s = 3 v i d = 100 m a drain current i ds(op) 4814mav ds = 6 v, v g1s = 0.75 v v g2s = 3 v forward transfer admittance |y fs | 2025 msv ds = 6 v, v g2s = 3 v i d = 10 ma , f = 1 khz input capacitance c iss 2.4 3.1 3.5 pf v ds = 6 v, v g2s = 3 v output capacitance c oss 0.8 1.1 1.4 pf i d = 10 ma , f = 1 mhz reverse transfer capacitance c rss 0.021 0.04 pf power gain pg 24 27.6 db v ds = 6 v, v g2s = 3 v noise figure nf 1.0 1.5 db i d = 10 ma , f = 200 mhz power gain pg 12 15.6 db v ds = 6 v, v g2s = 3 v noise figure nf 3 4 db i d = 10 ma , f = 900 mhz noise figure nf 2.7 3.5 db v ds = 6 v, v g2s = 3 v i d = 10 ma , f = 60 mhz
3SK317 3 200 150 100 50 0 50 100 150 200 channel power dissipation pch (mw) maximum channel power dissipation curve ambient temperature ta ( c) drain to source voltage v (v) ds drain current i (ma) d 20 16 12 8 4 0 1 2345 gate1 to source voltage v (v) g1s drain current i (ma) d typical output characteristics 20 16 12 8 4 0 1234 5 gate2 to source voltage v (v) g2s drain current i (ma) d 20 16 12 8 4 0 210 468 0.8 v 1.0 v 1.2 v drain current vs. gate1 to source voltage drain current vs. gate2 to source voltage v = 0.5 v g2s 2.0 v 1.5 v 3.0 v 2.5 v 1.0 v v = 0.5 v g1s 1.0 v 1.5 v 2.0 v 2.5 v 3.0 v 0.6 v v = 0.4 v g1s v = 3 v pulse test g2s v = 6 v pulse test ds v = 6 v pulse test ds
3SK317 4 30 24 18 12 6 0 0.4 0.8 1.2 1.6 2 1 v v = 0.5 v g2s gate1 to source voltage v (v) g1s forward transfer admittance vs. gate1 to source voltage |y (ms) fs| forward transfer admittance 0 50 40 30 20 10 4 8 12 16 20 drain current i (ma) d power gain pg (db) power gain vs. drain current 5 4 3 2 1 048121620 drain current i (ma) noise figure nf (db) noise figure vs. drain current 50 40 30 10 20 0 246810 drain to source voltage v (v) ds power gain vs. drain to source voltage power gain pg (db) 1.5 v 3 v 2 v v = 6 v f = 1khz ds 2.5 v v = 6 v v = 3v f = 200mhz ds g2s d v = 6 v v = 3v f = 200mhz ds g2s v = 3v i = 10ma f = 200mhz d g2s
3SK317 5 5 4 2 1 0246810 noise figure nf (db) drain to source voltage v (v) ds noise figure vs. drain to source voltage 20 16 12 8 4 0 drain current i (ma) power gain pg (db) power gain vs. drain current 4 8 12 16 20 048121620 5 3 4 2 1 drain current i (ma) d noise figure nf (db) noise figure vs. drain current 20 16 12 8 4 0 246810 drain to source voltage v (v) ds power gain pg (db) power gain vs. drain to source voltage 3 d v = 3v i = 10ma f = 900mhz g2s d v = 3v i = 10ma f = 200mhz g2s d v = 6v v = 3v f = 900mhz g2s ds v = 6v v = 3v f = 900mhz g2s ds
3SK317 6 10 8 4 2 0246810 noise figure nf (db) drain to source voltage v (v) ds noise figure vs. drain to source voltage 5 4 3 2 1 0 drain current i (ma) noise figure nf (db) noise figure vs. drain current 4 8 12 16 20 0246810 5 3 4 2 1 noise figure nf (db) noise figure vs. drain to source voltage drain to source voltage v (v) ds 6 v = 3v i = 10ma f = 900mhz g2s d d v = 6v v = 3v f = 60mhz g2s ds v = 3v i = 10ma f = 60mhz g2s d
3SK317 7 package dimensions 2.0 0.2 0.3 2.1 0.3 0.65 0.6 1.25 0.2 0.16 0 ?0.1 0.9 0.1 + 0.1 ?0.05 0.4 + 0.1 ?0.05 0.3 + 0.1 ?0.05 + 0.1 ?0.06 0.65 0.65 1.3 0.2 0.3 + 0.1 ?0.05 0.425 0.425 0.2 hitachi code jedec eiaj mass (reference value) cmpak-4(t) conforms 0.006 g 1.25 0.1 as of january, 2001 unit: mm
3SK317 8 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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